? semiconductor components industries, llc, 2006 february, 2006 ? rev. 7 1 publication order number: 2n6504/d 2n6504 series preferred device silicon controlled rectifiers reverse blocking thyristors designed primarily for half-wave ac control applications, such as motor controls, heating controls and power supply crowbar circuits. features ? glass passivated junctions with center gate fire for greater parameter uniformity and stability ? small, rugged, thermowatt constructed for low thermal resistance, high heat dissipation and durability ? blocking voltage to 800 volts ? 300 a surge current capability ? pb?free packages are available* *for additional information on our pb?free strategy and soldering details, please download the on semiconductor soldering and mounting techniques reference manual, solderrm/d. scrs 25 amperes rms 50 thru 800 volts preferred devices are recommended choices for future use and best overall value. k g a to?220ab case 221a style 3 1 2 3 4 pin assignment 1 2 3 anode gate cathode 4 anode marking diagram 2n650xg ayww x = 4, 5, 7, 8 or 9 a = assembly location y = year ww = work week g = pb?free device see detailed ordering and shipping information in the package dimensions section on page 6 of this data sheet. ordering information http://onsemi.com
2n6504 series http://onsemi.com 2 maximum ratings (t j = 25 c unless otherwise noted) rating symbol value unit *peak repetitive off?state voltage (note 1) (gate open, sine wave 50 to 60 hz, t j = 25 to 125 c) 2n6504 2n6505 2n6507 2n6508 2n6509 v drm, v rrm 50 100 400 600 800 v on-state current rms (180 conduction angles; t c = 85 c) i t(rms) 25 a average on-state current (180 conduction angles; t c = 85 c) i t(av) 16 a peak non-repetitive surge current (1/2 cycle, sine wave 60 hz, t j = 100 c) i tsm 250 a forward peak gate power (pulse width 1.0 s, t c = 85 c) p gm 20 w forward average gate power (t = 8.3 ms, t c = 85 c) p g(av) 0.5 w forward peak gate current (pulse width 1.0 s, t c = 85 c) i gm 2.0 a operating junction temperature range t j ?40 to +125 c storage temperature range t stg ?40 to +150 c maximum ratings are those values beyond which device damage can occur. maximum ratings applied to the device are individual str ess limit values (not normal operating conditions) and are not valid simultaneously. if these limits are exceeded, device functional operation i s not implied, damage may occur and reliability may be affected. 1. v drm and v rrm for all types can be applied on a continuous basis. ratings apply for zero or negative gate voltage; however, positive gate voltage shall not be applied concurrent with negative potential on the anode. blocking voltages shall not be tested with a cons tant current source such that the voltage ratings of the devices are exceeded. thermal characteristics characteristic symbol max unit *thermal resistance, junction?to?case r jc 1.5 c/w *maximum lead temperature for soldering purposes 1/8 in from case for 10 seconds t l 260 c electrical characteristics (t c = 25 c unless otherwise noted.) characteristic symbol min typ max unit off characteristics * peak repetitive forward or reverse blocking current (v ak = rated v drm or v rrm , gate open) t j = 25 c t j = 125 c i drm , i rrm ? ? ? ? 10 2.0 a ma on characteristics * forward on?state voltage (note 2) (i tm = 50 a) v tm ? ? 1.8 v * gate tri gger current (continuous dc) t c = 25 c (v ak = 12 vdc, r l = 100 )t c = ?40 c i gt ? ? 9.0 ? 30 75 ma * gate tri gger v oltage (continuous dc) (v ak = 12 vdc, r l = 100 , t c = ?40 c) v gt ? 1.0 1.5 v gate non-tri gger v oltage (v ak = 12 vdc, r l = 100 , t j = 125 c) v gd 0.2 ? ? v * holding current t c = 25 c (v ak = 12 vdc, initiating current = 200 ma, gate open) t c = ?40 c i h ? ? 18 ? 40 80 ma * turn-on time (i tm = 25 a, i gt = 50 madc) t gt ? 1.5 2.0 s turn-off time (v drm = rated voltage) (i tm = 25 a, i r = 25 a) (i tm = 25 a, i r = 25 a, t j = 125 c) t q ? ? 15 35 ? ? s dynamic characteristics critical rate of rise of off-state voltage (gate open, rated v drm , exponential waveform) dv/dt ? 50 ? v/ s *indicates jedec registered data. 2. pulse test: pulse width 300 s, duty cycle 2%.
2n6504 series http://onsemi.com 3 + current + voltage v tm i drm at v drm i h symbol parameter v drm peak repetitive off state forward voltage i drm peak forward blocking current v rrm peak repetitive off state reverse voltage i rrm peak reverse blocking current v tm peak on state voltage i h holding current voltage current characteristic of scr anode + on state reverse blocking region (off state) reverse avalanche region anode ? forward blocking region i rrm at v rrm (off state) c t , maximum case temperature ( c) dc 180 16 12 0 80 90 10 0 110 13 0 60 = 30 0 4.0 8.0 12 20 = conduction angle i t(av) , on-state forward current (amps) 90 p , average power (watts) (av) 180 90 24 0 8.0 16 32 t j = 125 c dc 60 = 30 i t(av) , average on-state forward current (amps) 16 0 4.0 8.0 12 20 = conduction angle figure 1. average current derating figure 2. maximum on?state power dissipation
2n6504 series http://onsemi.com 4 1.0 0.02 0.03 0.05 0.07 0.1 100 0.2 0.3 0.5 0.7 0.2 0.3 0.5 1.0 2.0 25 c 125 c 0.4 0.1 z jc(t) = r jc ? r(t) 1 cycle 1.0 200 surge is preceded and followed by rated current t c = 85 c f = 60 hz number of cycles 225 250 275 300 20 2.0 3.0 4.0 6.0 8.0 10 0.1 0 0.01 t, time (ms) 3.0 5.0 175 0.2 0.3 0.5 0.7 7.0 5.0 1.0 2.0 10 50 3.0 20 30 70 v f , instantaneous voltage (volts) 1.2 2.0 1.6 2.4 2.8 0.8 30 50 100 200 300 500 2.0 k 10 3.0 k 5.0 k 10 k 1.0 k i , peak surge current (amp) tsm r(t), transient thermal resistance (normalized) f i , instantaneous forward current (amps) figure 3. typical on?state characteristics figure 4. maximum non?repetitive surge current figure 5. thermal response
2n6504 series http://onsemi.com 5 typical trigger characteristics figure 6. typical gate trigger current versus junction temperature figure 7. typical gate trigger voltage versus junction temperature figure 8. typical holding current versus junction temperature 10 1 100 125 110 80 65 50 35 5 ?10 ?25 20 t j , junction temperature ( c) i gt , gate trigger current (ma) ?40 95 v gt 125 110 95 80 50 35 5 ?40 0.8 ?10 ?25 20 t j , junction temperature ( c) 0.6 0.4 0.2 , gate trigger voltage (volts) 1.0 65 0.9 0.7 0.5 0.3 i , holding current (ma) h t j , junction temperature ( c) 100 10 1 125 110 95 80 50 35 5 ?40 ?10 ?25 20 65
2n6504 series http://onsemi.com 6 ordering information device package shipping 2n6504 to?220ab 500 units / box 2n6504g to?220ab (pb?free) 2n6505 to?220ab 2n6505g to?220ab (pb?free) 2n6505t to?220ab 2n6505tg to?220ab (pb?free) 2n6507 to?220ab 2n6507g to?220ab (pb?free) 2n6507t to?220ab 2n6507tg to?220ab (pb?free) 2n6508 to?220ab 2n6508g to?220ab (pb?free) 2n6509 to?220ab 2n6509g to?220ab (pb?free) 2n6509t to?220ab 2N6509TG to?220ab (pb?free)
2n6504 series http://onsemi.com 7 package dimensions to?220ab case 221a?09 issue aa style 3: pin 1. cathode 2. anode 3. gate 4. anode notes: 1. dimensioning and tolerancing per ansi y14.5m, 1982. 2. controlling dimension: inch. 3. dimension z defines a zone where all body and lead irregularities are allowed. dim min max min max millimeters inches a 0.570 0.620 14.48 15.75 b 0.380 0.405 9.66 10.28 c 0.160 0.190 4.07 4.82 d 0.025 0.035 0.64 0.88 f 0.142 0.147 3.61 3.73 g 0.095 0.105 2.42 2.66 h 0.110 0.155 2.80 3.93 j 0.018 0.025 0.46 0.64 k 0.500 0.562 12.70 14.27 l 0.045 0.060 1.15 1.52 n 0.190 0.210 4.83 5.33 q 0.100 0.120 2.54 3.04 r 0.080 0.110 2.04 2.79 s 0.045 0.055 1.15 1.39 t 0.235 0.255 5.97 6.47 u 0.000 0.050 0.00 1.27 v 0.045 ??? 1.15 ??? z ??? 0.080 ??? 2.04 b q h z l v g n a k f 123 4 d seating plane ?t? c s t u r j on semiconductor and are registered trademarks of semiconductor components industries, llc (scillc). scillc reserves the right to mak e changes without further notice to any products herein. scillc makes no warranty, r epresentation or guarantee regarding the suitability of its products for an y particular purpose, nor does scillc assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including wi thout limitation special, consequential or incidental damages. ?typical? parameters which may be provided in scillc data sheets and/or specifications can and do vary in different application s and actual performance may vary over time. all operating parameters, including ?typicals? must be validated for each customer application by customer?s technical experts. scillc does not convey any license under its patent rights nor the rights of others. scillc products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the scillc product could create a sit uation where personal injury or death may occur. should buyer purchase or use scillc products for any such unintended or unauthorized application, buyer shall indemnify and hold scillc and its of ficers, employees, subsidiaries, af filiates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, direct ly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that scillc was negligent regarding the design or manufacture of the part. scillc is an equal opportunity/affirmative action employer. this literature is subject to all applicable copyright laws and is not for resale in any manner. publication ordering information n. american technical support : 800?282?9855 toll free usa/canada japan : on semiconductor, japan customer focus center 2?9?1 kamimeguro, meguro?ku, tokyo, japan 153?0051 phone : 81?3?5773?3850 2n6504/d literature fulfillment : literature distribution center for on semiconductor p.o. box 61312, phoenix, arizona 85082?1312 usa phone : 480?829?7710 or 800?344?3860 toll free usa/canada fax : 480?829?7709 or 800?344?3867 toll free usa/canada email : orderlit@onsemi.com on semiconductor website : http://onsemi.com order literature : http://www.onsemi.com/litorder for additional information, please contact your local sales representative.
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